IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXFN 22N120

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 20 V; I

15

26

S

C

iss

8100

pF

C

oss

V

GS

= 0 V, V

650

pF

C

rss

200

pF

t

d(on)

25

ns

t

r

V

GS

= 10 V, V

45

ns

t

d(off)

R

76

ns

t

f

28

ns

Q

g(on)

210

nC

Q

gs

V

GS

= 10 V, V

38

nC

Q

gd

99

nC

R

thJC

0.20

K/W

R

thCK

0.05

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

22

A

I

SM

Repetitive;

88

A

pulse width limited by T

JM

V

SD

I

1.3

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

180

300

ns

Q

RM

1.4

µC

I

RM

8A

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

31.50

31.88

1.240

1.255

B

7.80

8.20

0.307

0.323

C

4.09

4.29

0.161

0.169

D

4.09

4.29

0.161

0.169

E

4.09

4.29

0.161

0.169

F

14.91

15.11

0.587

0.595

G

30.12

30.30

1.186

1.193

H

38.00

38.23

1.496

1.505

J

11.68

12.22

0.460

0.481

K

8.92

9.60

0.351

0.378

L

0.76

0.84

0.030

0.033

M

12.60

12.85

0.496

0.506

N

25.15

25.42

0.990

1.001

O

1.98

2.13

0.078

0.084

P

4.95

5.97

0.195

0.235

Q

26.54

26.90

1.045

1.059

R

3.94

4.42

0.155

0.174

S

4.72

4.85

0.186

0.191

T

24.59

25.07

0.968

0.987

U

-0.05

0.1

-0.002

0.004