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IXFJ36N30 датащи(PDF) 1 Page - IXYS Corporation

номер детали IXFJ36N30
подробное описание детали  HiPerFET
PDF  2 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFJ36N30 датащи(HTML) 1 Page - IXYS Corporation

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© 2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
200
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MΩ
200
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C
= 25
°C36
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
144
A
I
AR
36
A
E
AR
T
C
= 25
°C19
mJ
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
5
V/ns
T
J
≤ 150°C, R
G = 2 Ω
P
D
T
C
= 25
°C
300
W
T
J
-55 ... +150
° C
T
JM
150
° C
T
stg
-55 ... +150
° C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
5g
Maximum lead temperature for soldering
300
° C
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS = 0 V, ID = 250 µA
200
V
V
GS(th)
V
DS
= V
GS, ID = 4 mA
2
4
V
I
GSS
V
GS
=
±20 V
DC, VDS = 0
±100
nA
I
DSS
V
DS = 0.8
V
DSS
T
J = 25°C25
µA
V
GS = 0 V
T
J = 125°C
250
µA
R
DS(on)
V
GS = 10 V, ID = 18A
70 m
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
HiPerFETTM
N-Channel Enhancement Mode
Features
Internationalstandardpackage
JEDEC TO-247 AD
Low R
DS (on) HDMOS
TM process
Ruggedpolysilicongatecellstructure
Highcommutatingdv/dtrating
Fastswitchingtimes
Applications
Switch-modeandresonant-mode
power supplies
Motorcontrols
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
Easytomountwith1screw
(isolated mounting screw hole)
Space savings
High power density
98859 9/01
G = Gate,
D = Drain,
S = Source,
TAB = Drain
(TAB)
G
D
S
é
IXTJ 36N20
V
DSS
= 200
V
I
D25
=
36
A
R
DS(on) =
70 m
t
rr < 200 ns
ADVANCE TECHNICAL INFORMATION


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