IXFP12N50P datasheet(1/5 Pages) IXYS

номер детали	IXFP12N50P

подробное описание детали	Polar Power MOSFET HiperFET

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

500

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C12

A

I

DM

T

C = 25°C, pulse width limited by TJM

30

A

I

A

T

C = 25°C12

A

E

AS

T

C = 25°C

600

mJ

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

20

V/ns

P

D

T

C = 25°C

200

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

M

d

Mounting torque

(TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

DS99436F(04/08)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

500

V

GS(th)

V

DS = VGS, ID = 1mA

3.0

5.5

V

I

GSS

V

GS = ±30V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS

5

μA

V

GS = 0V

T

J = 125°C

250

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

500 m

Ω

PolarTM Power MOSFET

HiperFETTM

N-Channel Enhancement Mode

Avalanche Rated

IXFA12N50P

IXFP12N50P

V

DSS

= 500V

I

D25

= 12A

R

DS(on) ≤

≤≤≤≤ 500mΩ

Ω

G = Gate

D

= Drain

S = Source

TAB = Drain

Features

International standard packages

Unclamped Inductive Switching

(UIS) rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

TO-263 (I

XFA)

TO-220 (I

XFP)

D

(TAB)

G

S

G

S

(TAB)

Аналогичный номер детали - IXFP12N50P

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXFP12N50PM	114Kb / 5P	Polar Power MOSFET HiPerFET

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Аналогичный номер детали - IXFP12N50P

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