BU941

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R203-025,B

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

500

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

5

V

Collector Current

15

A

Collector Peak Current

30

A

Base Current

1

A

Base Peak Current

5

W

TO-3P

155

W

TO-220

150

W

Total Power Dissipation (Tc=25

°C)

TO-263

65

W

Junction Temperature

+175

°C

Storage Temperature

-65 ~ +175

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Emitter Sustaining

Voltage

Ic=100mA, Vclamp=400V, L=10mH

(see Fig. 1)

400

V

Collector Cut-Off Current

100

0.5

µA

mA

Collector Cut-Off Current

100

0.5

µA

mA

Emitter Cut-off Current

20

mA

Collector-Emitter Saturation

Voltage

1.6

1.8

2

V

Base-Emitter Saturation Voltage

2.2

2.5

2.7

V

DC Current Gain

300

Diode Forward Voltage

2.5

V

Functional Test

(see Functional Test Circuit)

10

A

Fall Time

15

Storage Time

ts

(see Fig.2)

0.5

µs

*Pulsed: Pulse duration=300µs, duty cycle 1.5%