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4N65 датащи(PDF) 2 Page - Unisonic Technologies

номер детали 4N65
подробное описание детали  4 Amps, 650 Volts N-CHANNEL POWER MOSFET
PDF  8 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

4N65 датащи(HTML) 2 Page - Unisonic Technologies

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4N65
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-397.B
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
4.4
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note 2)
IDM
16
A
Single Pulsed (Note 3)
EAS
260
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
W
TO-220F/TO-220F1
36
W
TO-251
50
W
Power Dissipation
TO-252
PD
50
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 650 V, VGS = 0 V
10
μA
Forward
VGS = 30 V, VDS = 0 V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -30 V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature Coefficient
BV
△
DSS/△TJ
ID = 250 μA, Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.2 A
2.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
520 670
pF
Output Capacitance
COSS
70
90
pF
Reverse Transfer Capacitance
CRSS
VDS = 25 V, VGS = 0 V, f = 1MHz
8
11
pF



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