2SD2136

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R204-011.B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

60

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

6

V

Collector Current

3

A

Peak Collector Current

5

A

Collector Dissipation

1.5

W

Junction Temperature

150

°С

Storage Temperature

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

60

V

Collect Cutoff Current

300

µA

Collect Cutoff Current

200

µA

Emitter Cutoff Current

1

mA

40

250

DC Current Gain

10

Collector-Emitter Saturation Voltage

1.2

V

Base-Emitter Voltage

1.8

V

Current Gain Bandwidth Product

220

Turn On Time

0.5

µS

Storage Time

2.5

µS

Fall Time

0.4

µS

RANK

P

Q

R

RANGE

40-90

70-150

120-250