2SD468

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R211-003.B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

25

V

Collector-Emitter Voltage

20

V

Emitter-Base Voltage

5

V

Collector Current

1

A

Collector Peak Current

1.5

A

Collector Power Dissipation

0.9

W

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

Ic=10

µA, I

25

V

Collector-Emitter Breakdown Voltage

20

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-Off Current

1

µA

DC Current Transfer Ratio

85

240

Collector-Emitter Saturation Voltage

0.2

0.5

V

Base-Emitter Voltage

0.79

1

V

Gain Bandwidth Product

190

MHz

Collector Output Capacitance

22

pF

Note: Pulse test

RANK

B

C

RANGE

85 - 170

120 - 240