2SD667

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R211-019.A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

120

V

Collector to Emitter Voltage

100

V

Emitter to Base Voltage

6

V

Collector Current

1.0

A

Collector Peak Current (Note2)

2.0

A

Collector Power Dissipation

0.9

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. PW≤10ms, Duty cycle≤20%

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector to Base Breakdown Voltage

120

V

Collector to Emitter Breakdown Voltage

100

V

Emitter to Base Breakdown Voltage

6

V

Collector Cutoff Current

500

nA

Emitter Cutoff Current

500

nA

140

330

DC Current Transfer Ratio

40

Collector to Emitter Saturation Voltage

0.5

V

Base to Emitter Saturation Voltage

1.1

V