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2SB834 датащи(PDF) 2 Page - Unisonic Technologies

номер детали 2SB834
подробное описание детали  HIGH VOLTAGE TRANSISTOR
PDF  4 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SB834 датащи(HTML) 2 Page - Unisonic Technologies

  2SB834 Datasheet HTML 1Page - Unisonic Technologies 2SB834 Datasheet HTML 2Page - Unisonic Technologies 2SB834 Datasheet HTML 3Page - Unisonic Technologies 2SB834 Datasheet HTML 4Page - Unisonic Technologies  
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2SB834
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R204-018.D
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-7
V
Collector Current
IC
-3
A
Base Current
IB
-0.5
A
TO-126/TO-220F
25
W
Power Dissipation (TC=25°C)
TO-220
PC
30
W
Junction Temperature
TJ
+125
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC=-50mA
-60
V
Collector Cut-Off Current
ICBO
VCB=-60V
-100
μA
Emitter Cut-Off Current
IEBO
VEB=-7V
-100
μA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-3A, IB=0.3A
-1
V
Base-Emitter On Voltage
VBE(ON)
VCE=-5V, IC=-0.5A
-0.7
-1
V
hFE1
IC=-0.5A, VCE=-5V
60
300
DC Current Gain
hFE2
IC=-3A, VCE=-5V
20
Current Gain Bandwidth Product
fT
VCE=-5V, IC=-0.5A
9
MHZ
CLASSIFICATION of hFE1
RANK
O
Y
GR
RANGE
60-120
100-200
150-300



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