2SB798 datasheet(2/4 Pages) UTC

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2SB798

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R208-020.B

ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-30

Collector-Emitter Voltage

VCEO

-25

Emitter-Base Voltage

VEBO

-5.0

-1.0

Collector Current

Pulse(Note 1)

-1.5

Collector Dissipation (Note 2)

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

1. PW≦10ms,Duty Cycle≦50%

2. When mounted on a ceramic substrate of 16cm

2×0.7 mm.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut-Off Current

ICBO

VCB= -30V , IE= 0

-100

Emitter Cut-Off Current

IEBO

VEB= -5.0V, IC= 0

-100

DC Current Gain

hFE1

VCE= -1.0V, IC= -100mA

200

400

DC Current Gain

hFE2

VCE= -1.0V, IC= -1.0A

100

Base to Emitter Voltage

VBE

VCE= -6.0V, IC= -10mA

-600

-640

-700

Collector-Emitter Saturation

Voltage

VCE(sat)

IC= -1.0A, IB= -0.10A

-0.25

-0.40

Base-Emitter Saturation Voltage

VBE(sat)

IC= -1.0A, IB= -0.10A

-1.0

-1.2

Gain Bandwidth Product

VCE= -6.0V, IE= 10mA

110

MHz

Output Capacitance

Cob

VCB= -6.0V, IE= 0, f=1MHz

Note: 3. PW≦350μs, Duty Cycle≦2%

CLASSIFICATION OF hFE1

MARKING

hFE1

90-180

135-270

200-400

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