2SB776 datasheet(2/4 Pages) UTC

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2SB776

PNP PLANAR TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R204-003.C

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

-3

Collector Current

PULSE

-7

Base Current

-0.6

TO-126

Collector Dissipation (TC=25°C)

TO-252

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut-Off Current

ICBO

VCB=-50V, IE=0

-1000

Emitter Cut-Off Current

IEBO

VEB=-3V, Ic=0

-1000

hFE1

VCE=-2V, Ic=-20mA

100

200

DC Current Gain (Note)

hFE2

VCE=-2V, Ic=-1A

100

150

400

Collector-Emitter Saturation Voltage

VCE(SAT)

Ic=-2A, IB=-0.2A

-0.3

-0.5

Base-Emitter Saturation Voltage

VBE(SAT)

Ic=-2A, IB=-0.2A

-1.0

-2.0

Current Gain Bandwidth Product

VCE=-5V, Ic=-0.1A

MHz

Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

Note: Pulse test: PW<300

μs, Duty Cycle<2%

CLASSIFICATION OF h

FE2

RANK

RANGE

100-200

160-320

200-400

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