PT100MF1MP1 datasheet(3/10 Pages) SHARP

номер детали	PT100MF1MP1

подробное описание детали	Phototransistor

PDF	10 Pages

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производитель	SHARP [Sharp Corporation]

домашняя страница	http://sharp-world.com/

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3 / 10 page

Sheet No.: D1-A01601EN

PT100MF1MP1

■ Absolute Maximum Ratings

*1 10 s (MAX.) see reflow profile on page 8.

■ Electro-optical Charactertistics

*1 Ee: Illuminance by CIE standard light source A (tungsten lamp)

Parameter

Symbol

Rating

Unit

Collector-emitter voltage

VCEO

Emitter-collector voltage

VECO

Collector current

Collector power dissipation

Operating temperature

Topr

-30 to +85

°C

Storage temperature

Tstg

-40 to+ 95

°C

Soldering temperature *1

Tsol

240

°C

Parameter

Symbol

Conditions *1

MIN.

TYP.

MAX.

Unit

Collector current

Ee = 0.01 mW/cm2, VCE = 5 V

0.2

–

1.2

Dark current

ICEO

Ee = 0, VCE = 10 V

–

1.0

µA

Collector-emitter saturation voltage

VCE(sat)

Ee = 1 mW/cm2, Ic = 0.8 mA

–

1.0

Collector-emitter breakdown voltage

BVCEO

IC = 0.1 mA, Ee = 0

–

Emitter-collector breakdown voltage

BVECO

IE = 0.01 mA, Ee = 0

–

Peak sensitivity wavelength

λp

–

860

–

Response time (Rise)

VCE = 2 V, IC = 5 mA,

RL = 100

–

400

2,000

µs

Response time (Fall)

–

300

1,500

µs

Half intensity angle

Δθ

––

±15

–

(Ta = 25°C)

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