PT100MF0MP datasheet(3/11 Pages) SHARP

3 / 11 page

Sheet No.: D1-A01801EN

PT100MF0MPx

■ Absolute Maximum Ratings

*1 Within 10 s (MAX.) see reflow profile on page 7.

■ Electro-optical Charactertistics

*1 Ee: Irradiance by CIE standard light source A (tungsten lamp)

Parameter

Symbol

Rating

Unit

Collector-emitter voltage

VCEO

Emitter-collector voltage

VECO

Collector current

Collector power dissipation

Operating temperature

Topr

-30 to +85

°C

Storage temperature

Tstg

-40 to + 95

°C

Soldering temperature *1

Tsol

240

°C

Parameter

Symbol

Conditions *1

MIN.

TYP.

MAX.

Unit

Collector current

Ee = 1 mW/cm2, VCE = 5 V

1.15

3.45

Collector dark current

ICEO

Ee = 0, VCE = 20 V

–

1.0

100

Collector-emitter saturation voltage

VCE(sat)

Ee = 10 mW/cm2, IC = 0.5 mA

–

0.1

0.4

Collector-emitter breakdown voltage

BVCEO

IC = 0.1 mA, Ee = 0

–

Emitter-collector breakdown voltage

BVECO

IE = 0.01 mA, Ee = 0

–

Peak sensitivity wavelength

λp–

–

910

–

Response time (Rise)

VCE = 2 V, IC = 2 mA,

RL = 100 Ω

–5.0

–

µs

Response time (Fall)

–

6.0

–

µs

Angle of half intensity

Δθ

–

±15

–

degrees

Fig. 1 Collector Power Dissipation vs.

Ambient Temperature

-30

100

Ambient temperature Ta (°C)

Fig. 2 Collector Dark Current vs.

Ambient Temperature

10-10

10-9

10-8

10-7

10-6

025

100

Ambient temperature Ta (°C)

VCE = 20 V

(Ta = 25°C)

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