GL100MN0MP datasheet(3/11 Pages) SHARP

номер детали	GL100MN0MP

подробное описание детали	Surface Mount Type, Infrared Emitting Diode

PDF	11 Pages

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производитель	SHARP [Sharp Corporation]

домашняя страница	http://sharp-world.com/

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Sheet No.: D1-A00601EN

GL100MN0MPx

■ Absolute Maximum Ratings

*1 Pulse width: 100 µs, Duty ratio: 0.01

*2 Within 10 s (MAX.) see Fig. 10.

■ Electro-optical Charactertistics

Parameter

Symbol

Rating

Unit

Forward current

Peak pulsed forward current *1

IFM

0.5

Reverse voltage

Power dissipation

Operating temperature

Topr

-30 to +85°C

Storage temperature

Tstg

-40 to+ 95

°C

Soldering temperature *2

Tsol

240

°C

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Forward voltage

IF = 20 mA

–

1.2

1.4

Peak forward voltage

VFM

IFM = 0.5 A

–

3.0

4.0

Reverse current

VR = 3 V

––

µA

Radiant intensity

φe

IF = 20 mA

1.0

–

3.0

Peak emission wavelength

λpIF = 5 mA

–

940

–

Half intensity wavelength

Δλ

IF = 5 mA

–

Terminal capacitance

VR = 0, f = 1 MHz

–

Response frequency

–

300

–

kHz

Half-intensity angle

Δθ

–

±10

–

degrees

Fig. 1 Forward Current vs.

Ambient Temperature

-50

-25

100

Ambient temperature Ta (°C)

-30

Fig. 2 Peak Forward Current vs. Duty Ratio

100

1000

10000

Duty ratio

10-4

10-3

10-2

10-1

100

Pulse width

≤ 100 µs

Ta = 25°C

(Ta = 25°C)

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