MA4SPS42X datasheet(2/7 Pages) MA-COM

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SURMOUNTTM PIN Diodes

MA4SPS421, MA4SPS422

Rev. V7

MA4SPS42X Series

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Electrical Specifications @ TA = +25°C

1. Total Capacitance, CT, is equivalent to the sum of Junction Capacitance and Parasitic Capacitance.

CT = CJ (Junction Capacitance) + CPAR (Parasitic Capacitance)

2. Series resistance RS is equivalent to the total diode resistance:

RS = RJ (Junction Capacitance Junction Resistance) + RO (Ohmic Resistance)

RS and CT are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-186 package.

Steady-state RØJL measured with die mounted in an ODS-186 package.

Parameter

Symbol

Conditions

Units

MA4SPS421

MA4SPS422

Typ.

Max.

Typ.

Max.

Capacitance

0V, 1MHz 1

0.130

0.175

0.340

0.500

Capacitance

0V, 1GHz 1,3

0.080

0.140

Capacitance

- 40V, 1MHz 1

0.090

0.125

0.180

0.300

Capacitance

- 40V, 1GHz 1,3

0.070

0.130

Resistance

+10mA, 1GHz 2,3

Ω

6.200

3.100

Forward Voltage

+10mA

0.900

0.950

0.840

0.900

Reverse Leakage

Current

-200V

μA

|-10|

Input Third Order

Intercept Point

IIP3

F1 = 1000MHz

dBm

F2 = 1010MHz

Input Power = +10dBm

I bias = +10mA

Minority Carrier

Lifetime

+10mA / -6mA

µS

(50% - 90% V)

C.W. Thermal

Resistance

RØJL

IH = 0.5A, IL = 10mA

°C/W

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