38C2 datasheet(8/14 Pages) RENESAS

8 / 14 page

Code : Difference of 38C2 Group

Page : 8 of 12

Rev. 1.00 Date : Sep.8, 2003

1.0

165

200

2.0

7.2

Max.

0.1

125

150

1.0

5.0

Typ.

Flash

memory

version

Standard

version

0.1

125

150

1.0

5.0

6.0

Typ.

Flash

memory

version

A version

1.0

165

200

2.0

7.2

8.6

Max.

µA

Low-speed mode, Vcc = 3V, Ta =25°C, f(XIN) = stopped

f(XCIN) = 32.768kHz(in WIT state), Output transistors “off”

µA

1.0

0.1

1.0

0.1

All oscillation stopped (in STP state), Ta =25°C,

Output transistors “off”

µA

All oscillation stopped (in STP state), Ta =85°C,

Output transistors “off”

µA

Low-speed mode, Vcc = 3V, Ta <= 55°C, f(XIN) = stopped

f(XCIN) = 32.768kHz, Output transistors “off”

µA

Low-speed mode, Vcc = 5V, Ta =25°C, f(XIN) = stopped

f(XCIN) = 32.768kHz(in WIT state), Output transistors “off”

µA

Low-speed mode, Vcc = 5V, Ta <= 55°C, f(XIN) = stopped

f(XCIN) = 32.768kHz, Output transistors “off”

2.0

1.0

2.0

1.0

Frequency/2 mode, Vcc = 5V, f(XIN) = 8MHz (in WIT state),

f(XCIN) = 32.768kHz, Output transistors “off”, A-D converter stop

4.2

2.7

4.2

2.7

Frequency/2 mode, Vcc = 5V, f(XIN) = 8MHz, f(XCIN) = 32.768 kHz

Output transistors “off”, A-D converter in operating

5.1

3.4

Frequency/2 mode, Vcc = 5V, f(XIN) = 10MHz, f(XCIN) = 32.768kHz

Output transistors “off”, A-D converter in operating

Power

source

current

Icc

Max.

Typ.

Max.

Typ.

Unit

Mask

ROM

version

A version

Mask

ROM

version

Standard

version

Test conditions

Parameter

Symbol

5. Electrical characteristics (Power source current)

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