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SST25VF032B датащи(PDF) 17 Page - Microchip Technology |
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SST25VF032B датащи(HTML) 17 Page - Microchip Technology |
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17 / 31 page ![]() ©2011 Silicon Storage Technology, Inc. S71327-04-000 02/11 17 32 Mbit SPI Serial Flash SST25VF032B Data Sheet A Microchip Technology Company Chip-Erase The Chip-Erase instruction clears all bits in the device to FFH. A Chip-Erase instruction will be ignored if any of the memory area is protected. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the Chip-Erase instruction sequence. Initiate the Chip-Erase instruction by executing an 8-bit command, 60H or C7H. CE# must be driven high before the instruction is executed. Poll the Busy bit in the software status register or wait TCE for the comple- tion of the internal self-timed Chip-Erase cycle. See Figure 15 for the Chip-Erase sequence. Figure 15:Chip-Erase Sequence Read-Status-Register (RDSR) The Read-Status-Register (RDSR) instruction allows reading of the status register. The status register may be read at any time even during a Write (Program/Erase) operation. When a Write operation is in progress, the Busy bit may be checked before sending any new commands to assure that the new commands are properly received by the device. CE# must be driven low before the RDSR instruction is entered and remain low until the status data is read. Read-Status-Register is continuous with ongoing clock cycles until it is terminated by a low to high transition of the CE#. See Figure 16 for the RDSR instruction sequence. Figure 16:Read-Status-Register (RDSR) Sequence CE# SO SI SCK 01 2 3 4 5 6 7 60 or C7 HIGH IMPEDANCE MODE 0 MODE 3 1327 F16.0 MSB 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 1327 F17.0 MODE 3 SCK SI SO CE# Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 05 MODE 0 HIGH IMPEDANCE Status Register Out MSB MSB |
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