2SC3835 datasheet(1/3 Pages) JMNIC

номер детали	2SC3835

подробное описание детали	Silicon NPN Power Transistor

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производитель	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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Product Specification

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Silicon NPN Power Transistor

2SC3835

DESCRIPTION

・Low Collector Saturation Voltage

: VCE(sat)= 0.5V(Max)@ IC=3A

・Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 120V (Min)

・Good Linearity of hFE

APPLICATIONS

・Designed for use in humidifier , DC/DC converter and

general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

7

A

ICM

Collector Current-Pulse

14

A

IB

Base Current-Continuous

3

A

PC

Collector Power Dissipation

@ TC=25℃

70

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Аналогичный номер детали - 2SC3835

производитель	номер детали	датащи	подробное описание детали
Sanken electric	2SC3835	24Kb / 1P	Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)
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Аналогичный номер детали - 2SC3835

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