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2SC6144SG датащи(PDF) 2 Page - Sanyo Semicon Device |
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2SC6144SG датащи(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SC6144SG No. A1800-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=40V, IE=0A 10 μA Emitter Cutoff Current IEBO VEB=4V, IC=0A 10 μA DC Current Gain hFE VCE=2V, IC=270mA 200 560 Gain-Bandwidth Product fT VCE=10V, IC=3A 330 MHz Output Capacitance Cob VCB=10V, f=1MHz 60 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=6A, IB=300mA 180 360 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=6A, IB=300mA 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=100μA, IE=0A 60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100μA, IC=0A 5 V Turn-On Time ton See specified Test Circuit. 62 ns Storage Time tstg See specified Test Circuit. 350 ns Fall Time tf See specified Test Circuit. 25 ns Switching Time Test Circuit IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V IC -- VCE IT13454 05 234 1 0 1 7 6 5 4 3 2 8 9 10 IB=0mA 5mA 30mA 40mA 45mA 50mA 60mA 10mA 20mA 25mA 35mA 15mA IT13455 0 2.0 1.0 1.5 0.5 0 0.5 3.5 3.0 2.5 2.0 1.5 1.0 4.0 4.5 5.0 IB=0mA 2mA 12mA 16mA 18mA 20mA 4mA 8mA 14mA 6mA 30mA 10mA hFE -- IC IC -- VBE Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A IT13457 3 5 7 2 100 3 5 7 0.01 3 25 0.1 72 3 5 1.0 10 72 3 2 35 5 7 Ta=75 °C 25 °C VCE=2V 25 20 15 5 10 0 0 IT13456 0.5 1.0 1.5 VCE=2V --25 °C VR RB VCC=20V IC=20IB1= --20IB2=5A VBE= --5V + + 50Ω INPUT OUTPUT RL 100μF 470μF PW=20μs IB1 D.C.≤1% IB2 |
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