HT82K70E-L datasheet(4/59 Pages) HOLTEK

4 / 59 page

Absolute Maximum Ratings

Supply Voltage ...........................VSS

-0.3V to VSS+6.0V

Storage Temperature ............................

-50°Cto125°C

Input Voltage..............................VSS

-0.3V to VDD+0.3V

Operating Temperature...........................

-40°Cto85°C

IOL Total ..............................................................150mA

IOH Total............................................................

-100mA

Total Power Dissipation .....................................500mW

Note: These are stress ratings only. Stresses exceeding the range specified under

²Absolute Maximum Ratings² may

cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed

in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.

D.C. Characteristics

Ta=25

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VDD

Conditions

VDD

Operating Voltage (Crystal OSC)

fSYS=4MHz

1.8

5.5

fSYS=8MHz

3.3

5.5

IDD

Operating Current (Crystal OSC)

No load, fSYS=6MHz

ISTB1

Standby Current

No load, system HALT,

WDT Enabled

¾¾

ISTB2

Standby Current

No load, system HALT,

WDT Disabled

¾¾

VIL1

Input Low Voltage for I/O, TMR

and INT

¾¾

0.3VDD

VIH1

Input High Voltage for I/O, TMR

and INT

¾¾

0.7VDD

VDD

VIL2

Input Low Voltage (RES)

¾¾

0.4VDD

VIH2

Input High Voltage (RES)

¾¾

0.9VDD

VDD

IOL

I/O Port Sink Current

VOL=0.1VDD

¾¾

IOH

I/O Port Source Current

VOH=0.9VDD

-2.5

-4.5

RPH

Pull-high Resistance

HT82K70E-L/HT82K70A-L/HT82K76E-L

Rev. 1.20

February 1, 2011

HT82K70E-L датащи(PDF) 4 Page - Holtek Semiconductor Inc

HT82K70E-L датащи(HTML) 4 Page - Holtek Semiconductor Inc

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59

датащи скачать

ссылки URL