CMPTH10

SURFACE MOUNT

NPN SILICON

RF TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTH10 type

is an NPN silicon RF transistor manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for low noise UHF/VHF

amplifier and high output oscillator applications.

MARKING CODE: C3E

SOT-23 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

3.0

V

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=25V

100

nA

IEBO

VEB=2.0V

100

nA

BVCBO

IC=100µA

30

V

BVCEO

IC=1.0mA

25

V

BVEBO

IE=10µA

3.0

V

VCE(SAT)

IC=4.0mA, IB=0.4mA

0.50

V

VBE(ON)

VCE=10V, IB=4.0mA

0.95

V

hFE

VCE=10V, IC=4.0mA

60

fT

VCE=10V, IC=4.0mA, f=100MHz

650

MHz

Ccb

VCB=10V, IE=0, f=1.0MHz

0.70

pF

Crb

VCB=10V, IE=0, f=1.0MHz

0.65

pF

rb’Cc

VCB=10V, IC=4.0mA, f=31.8MHz

9.0

ps

R5 (3-February 2010)

www.centra lsemi.com