CMPT5088

CMPT5089

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5088 and

CMPT5089 are NPN silicon transistors manufactured

by the epitaxial planar process, epoxy molded in a

surface mount package, designed for small signal

general purpose and switching applications.

MARKING CODES: CMPT5088: C1Q

CMPT5089: C1R

SOT-23 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

CMPT5088

CMPT5089

UNITS

Collector-Base Voltage

VCBO

35

30

V

Collector-Emitter Voltage

VCEO

30

25

V

Emitter-Base Voltage

VEBO

4.5

V

Continuous Collector Current

IC

50

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

CMPT5088

CMPT5089

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICBO

VCB=20V

-

50

-

-

nA

ICBO

VCB=15V

-

-

-

50

nA

IEBO

VEB=3.0V

-

50

-

-

nA

IEBO

VEB=4.5V

-

-

-

100

nA

BVCBO

IC=100μA

35

-

30

-

V

BVCEO

IC=1.0mA

30

-

25

-

V

BVEBO

IE=100μA

4.5

-

4.5

-

V

VCE(SAT)

IC=10mA, IB=1.0mA

-

0.5

-

0.5

V

VBE(SAT)

IC=10mA, IB=1.0mA

-

0.8

-

0.8

V

hFE

VCE=5.0V, IC=0.1mA

300

900

400

1200

hFE

VCE=5.0V, IC=1.0mA

350

-

450

-

hFE

VCE=5.0V, IC=10mA

300

-

400

-

fT

VCE=5.0V, IC=500μA, f=20MHz

50

-

50

-

MHz

Cob

VCB=5.0V, IE=0, f=1.0MHz

-

4.0

-

4.0

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

-

15

-

15

pF

hfe

VCE=5.0V, IC=1.0mA, f=1.0kHz

350

1400

450

1800

NF

VCE=5.0V, IC=100μA, RS=10kΩ,

f=10Hz to 15.7kHz

-

3.0

-

2.0

dB

R7 (9-September 2010)

www.centra lsemi.com