CMPT2222AE

ENHANCED SPECIFICATION

SURFACE MOUNT

NPN SILICON TRANSISTOR

ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

hie

VCE=10V, IC=1.0mA, f=1.0kHz

2.0

8.0

kΩ

hie

VCE=10V, IC=10mA, f=1.0kHz

0.25

1.25

kΩ

hre

VCE=10V, IC=1.0mA, f=1.0kHz

8.0

hre

VCE=10V, IC=10mA, f=1.0kHz

4.0

hfe

VCE=10V, IC=1.0mA, f=1.0kHz

50

300

hfe

VCE=10V, IC=10mA, f=1.0kHz

75

375

hoe

VCE=10V, IC=1.0mA, f=1.0kHz

5.0

35

μS

hoe

VCE=10V, IC=10mA, f=1.0kHz

25

200

μS

rb’Cc

VCB=10V, IE=20mA, f=31.8MHz

150

ps

NF

VCE=10V,IC=100μA, RS =1.0KΩ, f=1.0kHz

4.0

dB

td

VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA

10

ns

tr

VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA

25

ns

ts

VCC=30V, IC=150mA, IB1=IB2=15mA

225

ns

tf

VCC=30V, IC=150mA, IB1=IB2=15mA

60

ns

LEAD CODE:

1) Base

2) Emitter

3) Collector

MARKING CODE: C1PE

SOT-23 CASE - MECHANICAL OUTLINE

www.centr a lsemi.com

R2 (1-February 2010)