CMLT8099M

SURFACE MOUNT

DUAL, MATCHED

NPN SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT8099M

consists of two individual, isolated 8099 NPN silicon

transistors with matched VBE(ON) characteristics.

This PICOmini™ device is manufactured by the

epitaxial planar process and epoxy molded in an

SOT-563 surface mount package.

MARKING CODE: 8CM

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

6.0

V

Continous Collector Current

IC

500

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=80V

0.1

µA

IEBO

VBE=6.0V

0.1

µA

BVCBO

IC=100µA

80

V

BVCEO

IC=10mA

80

V

BVEBO

IE=10µA

6.0

V

VCE(SAT)

IC=100mA, IB=5.0mA

0.4

V

VCE(SAT)

IC=100mA, IB=10mA

0.3

V

VBE(ON)

VCE=5.0V, IC=10mA

0.6

0.8

V

hFE

VCE=5.0V, IC=1.0mA

100

300

hFE

VCE=5.0V, IC=10mA

100

hFE

VCE=5.0V, IC=100mA

75

fT

VCE=5.0V, IC=10mA, f=100MHz

150

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

6.0

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

25

pF

MATCHING CHARACTERISTICS:

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

VCE=5.0V, IC=1.0µA

10

mV

VCE=5.0V, IC=5.0µA

10

mV

VCE=5.0V, IC=10µA

10

mV

VCE=5.0V, IC=100µA

10

mV

APPLICATIONS:

• Small signal general purpose amplifiers

FEATURES:

• Transistor pair matched for VBE(ON)

• Device is Halogen Free by design

SOT-563 CASE

R1 (20-January 2010)

www.centra lsemi.com