CMLM0584

SURFACE MOUNT SILICON

P-CHANNEL MOSFET AND

LOW VF SCHOTTKY DIODE

Crss

VDS=25V, VGS=0, f=1.0MHz

10

pF

Ciss

VDS=25V, VGS=0, f=1.0MHz

55

pF

Coss

VDS=25V, VGS=0, f=1.0MHz

15

pF

ELECTRICAL CHARACTERISTICS - D1: (TA=25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=10V

20

μA

IR

VR=30V

100

μA

BVR

IR=500μA

40

V

VF

IF=100μA

0.13

V

VF

IF=1.0mA

0.21

V

VF

IF=10mA

0.27

V

VF

IF=100mA

0.35

V

VF

IF=500mA

0.47

V

CT

VR=1.0V, f=1.0MHz

50

pF

LEAD CODE:

1) Gate Q1

2) Source Q1

3) Cathode D1

4) Anode D1

5) Anode D1

6) Drain Q1

MARKING CODE: 58C

SOT-563 CASE - MECHANICAL OUTLINE

ELECTRICAL CHARACTERISTICS - Q1 - Continued: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MAX

UNITS

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R1 (28-July 2010)