CMLDM8120G datasheet(1/2 Pages) CENTRAL

номер детали	CMLDM8120G

подробное описание детали	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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производитель	CENTRAL [Central Semiconductor Corp]

домашняя страница	http://www.centralsemi.com

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CMLDM8120

CMLDM8120G*

SURFACE MOUNT

P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

DESCRIPTION:

These CENTRAL SEMICONDUCTOR devices

are Enhancement-mode P-Channel Field Effect

Transistors, manufactured by the P-Channel DMOS

Process, designed for high speed pulsed amplifier and

driver applications. This MOSFET offers Low rDS(on)

and Low Theshold Voltage.

MARKING CODES:

CMLDM8120:

C81

CMLDM8120G*: C8G

FEATURES:

• Low rDS(on)

• Low Threshold Voltage

• Logic Level Compatible

• Small SOT-563 package

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Equipment

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

8.0

V

Continuous Drain Current (Steady State)

ID

860

mA

Continuous Drain Current, t≤5.0s

ID

950

mA

Continuous Source Current (Body Diode)

IS

360

mA

Maximum Pulsed Drain Current, tp=10μs

IDM

4.0

A

Maximum Pulsed Source Current, tp=10μs

ISM

4.0

A

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 3)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IGSSF, IGSSR

VGS=8.0V, VDS=0

1.0

50

nA

IDSS

VDS=20V, VGS=0

5.0

500

nA

BVDSS

VGS=0, ID=250μA

20

24

V

VGS(th)

VDS=VGS, ID=250μA

0.45

0.76

1.0

V

VSD

VGS=0V, IS=360mA

0.9

V

rDS(ON)

VGS=4.5V, ID=0.95A

0.085

0.15

Ω

rDS(ON)

VGS=4.5V, ID=0.77A

0.085

0.142

Ω

rDS(ON)

VGS=2.5V, ID=0.67A

0.13

0.20

Ω

rDS(ON)

VGS=1.8V, ID=0.2A

0.19

0.24

Ω

* Device is Halogen Free by design

SOT-563 CASE

R3 (18-January 2010)

www.centr a lsemi.com

Аналогичный номер детали - CMLDM8120G

производитель	номер детали	датащи	подробное описание детали
Central Semiconductor C...	CMLDM8120TG	517Kb / 2P	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
	CMLDM8120TG	530Kb / 3P	SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET
	CMLDM8120	532Kb / 3P	SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET

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Аналогичное описание - CMLDM8120G

производитель	номер детали	датащи	подробное описание детали
Central Semiconductor C...	CMPDM302PH	349Kb / 2P	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
	CMPDM8002A	329Kb / 2P	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
	CMLDM8120TG	517Kb / 2P	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
	CMUDM8005	398Kb / 2P	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
	CEDM8004	457Kb / 2P	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
	CEDM8004VL	956Kb / 4P	SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET
	CMLDM8120	532Kb / 3P	SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET
	CMLDM8120TG	530Kb / 3P	SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET
	CMPDM202PH	353Kb / 2P	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
	CXDM4060P	854Kb / 3P	SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET

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CMLDM8120G датащи(PDF) 1 Page - Central Semiconductor Corp

CMLDM8120G датащи(HTML) 1 Page - Central Semiconductor Corp

Аналогичный номер детали - CMLDM8120G

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