2N6989U datasheet(1/7 Pages) MICROSEMI

номер детали	2N6989U

подробное описание детали	MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE

PDF	7 Pages

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производитель	MICROSEMI [Microsemi Corporation]

домашняя страница	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland.

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE

AND FLATPACK SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/559

T4-LDS-0177 Rev. 1 (101229)

Page 1 of 7

DEVICES

LEVELS

2N6989

2N6989U

JAN

2N6990

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage (3)

VCEO

50

Vdc

Collector-Base Voltage (3)

VCBO

75

Vdc

Emitter-Base Voltage (3)

VEBO

6.0

Vdc

Collector Current (3)

IC

800

mAdc

Total Power Dissipation

@ TA = +25°C

2N6989 (2)

2N6989U (2)

2N6990 (2)

PD

1.5

1.0

W

Operating & Storage Junction Temperature Range

Top, Tstg

-65 to +200

°C

Note:

1. Maximum voltage between transistors shall be ≥ 500Vdc.

2. For derating, see figures 6, 7, 8 and 9. Ratings apply to total package.

3. For thermal impedance curves, see figures 10, 11, 12 and 13.

4. Ratings apply to each transistor in the array.

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

IC = 10mAdc

V(BR)CEO

50

Vdc

Collector-Base Cutoff Current

VCB = 60Vdc

VCB = 75Vdc

VCB = 60Vdc, TA = +150°C

ICBO

10

ηAdc

μAdc

Emitter-Base Cutoff Current

VEB = 4.0Vdc

VEB = 6.0Vdc

IEBO

10

μAdc

ηAdc

TO-116 – 2N6989

20 PIN LEADLESS

2N6989U

14 PIN FLAT PACK

2N6990

Аналогичный номер детали - 2N6989U

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OPTEK Technologies	2N6989U	200Kb / 2P	Surface Mount Quad NPN Transistor
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