CMLDM3737 datasheet(1/2 Pages) CENTRAL

номер детали	CMLDM3737

подробное описание детали	SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS

PDF	2 Pages

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производитель	CENTRAL [Central Semiconductor Corp]

домашняя страница	http://www.centralsemi.com

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MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

8.0

V

Continuous Drain Current (Steady State)

ID

540

mA

Maximum Pulsed Drain Current (tp=10μs)

IDM

1.5

A

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 3)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance (Note 1)

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IGSSF, IGSSR VGS=4.5V, VDS=0

5.0

μA

IDSS

VDS=16V, VGS=0

1.0

μA

BVDSS

VGS=0, ID=250μA

20

V

VGS(th)

VDS=VGS, ID=250μA

0.45

1.0

V

VSD

VGS=0, IS=350mA

1.2

V

rDS(ON)

VGS=4.5V, ID=540mA

0.55

Ω

rDS(ON)

VGS=2.5V, ID=500mA

0.7

Ω

rDS(ON)

VGS=1.8V, ID=350mA

0.9

Ω

Qg(tot)

VDS=10V, VGS=4.5V, ID=500mA

1.58

nC

Qgs

VDS=10V, VGS=4.5V, ID=500mA

0.17

nC

Qgd

VDS=10V, VGS=4.5V, ID=500mA

0.24

nC

CMLDM3737

SURFACE MOUNT

DUAL N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFETS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLDM3737

consists of Dual N-Channel Enhancement-mode silicon

MOSFETs designed for high speed pulsed amplifier

and driver applications. These MOSFETs offer Very

Low rDS(ON) and Low Threshold Voltage.

MARKING CODE: 7C3

FEATURES:

• ESD Protection up to 2kV

• 350mW Power Dissipation

• Very Low rDS(ON)

• Low Threshold Voltage

• Logic Level Compatible

• Small, SOT-563 Surface Mount Package

• Complementary Dual P-Channel Device: CMLDM5757

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2

APPLICATIONS:

• Load Switch / Level Shifting

• Battery Charging

• Boost Switch

• Electro-luminescent Backlighting

SOT-563 CASE

R1 (28-October 2010)

www.centr a lsemi.com

Аналогичный номер детали - CMLDM3737

производитель	номер детали	датащи	подробное описание детали
Central Semiconductor C...	CMLDM3737	1Mb / 2P	Dual, Complementary MOSFETs
	CMLDM3737	605Kb / 3P	SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET
	CMLDM3737_5757	1Mb / 2P	Dual, Complementary MOSFETs in miniature SOT-563 package
	CMLDM3737_5757	1Mb / 2P	Dual, Complementary MOSFETs in miniature SOT-563 package

More results

Аналогичное описание - CMLDM3737

производитель	номер детали	датащи	подробное описание детали
Central Semiconductor C...	CMRDM3590	422Kb / 2P	SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
	CMXDM7002A	497Kb / 2P	SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
	CMKDM8005	488Kb / 2P	SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
	CMLDM7005	592Kb / 2P	SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
	CTLDM7003T-M563D	641Kb / 2P	SURFACE MOUNT DUAL, N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
	CTLDM7120-M832D	475Kb / 2P	SURFACE MOUNT DUAL, N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
	CMLDM7002A	963Kb / 4P	SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFETS
	CMLDM7003	730Kb / 4P	SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFETS
	CMLDM8002A	995Kb / 4P	SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
	CTLDM7120-M832D	475Kb / 2P	SURFACE MOUNT DUAL, N-CHANNEL ENHANCEMENT- SILICON MOSFETS

More results

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Аналогичный номер детали - CMLDM3737

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