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2N6277 датащи(PDF) 2 Page - Microsemi Corporation

номер детали 2N6277
подробное описание детали  NPN POWER SILICON TRANSISTOR
PDF  3 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N6277 датащи(HTML) 2 Page - Microsemi Corporation

  2N6277 Datasheet HTML 1Page - Microsemi Corporation 2N6277 Datasheet HTML 2Page - Microsemi Corporation 2N6277 Datasheet HTML 3Page - Microsemi Corporation  
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
T4-LDS-0163 Rev. 1 (100546)
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
IC = 1.0Adc, VCE = 4.0Vdc
IC = 20Adc, VCE = 4.0Vdc
IC = 50Adc, VCE = 4.0Vdc
hFE
50
30
10
120
Collector-Emitter Saturation Voltage
IC = 20Adc, IB = 2.0Adc
IC = 50Adc, IB = 10Adc
VCE(sat)
1.0
3.0
Vdc
Base-Emitter Saturation Voltage
IC = 20Adc, IB = 2.0Adc
VBE(sat)
1.8
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-Circuit, Forward
Current Transfer Ratio
IC = 1.0Adc, VCE = 10Vdc, f = 10MHz
|hfe|
3.0
12
Output Capacitance
VCB = 10Vdc, IE = 0, f = 1.0MHz
Cobo
600
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
VCC = 80Vdc; IC = 20Adc; IB = 2.0Adc
ton
0.5
μs
Turn-Off Time
VCC = 80Vdc ; IC = 20Adc; IB1 = -IB2 = 2.0Adc
toff
1.05
μs
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 5.0Vdc, IC = 50Adc
All Types
Test 2
VCE = 8.6Vdc, IC = 165mAdc
All Types
Test 3
VCE = 80Vdc, IC = 29mAdc
2N6274
Test 4
VCE = 120Vdc, IC = 110mAdc
2N6277
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%



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