2N5686 datasheet(1/3 Pages) MICROSEMI

номер детали	2N5686

подробное описание детали	NPN POWER SILICON TRANSISTOR

PDF	3 Pages

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производитель	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/464

T4-LDS-0162 Rev. 1 (100546)

Page 1 of 3

DEVICES

LEVELS

2N5685

2N5686

JAN

JANTX

JANTV

Note:

1. Derate linearly 1.715 W/°C between TC = 25°C and TC = 200°C

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

(1)

Collector-Emitter Breakdown Voltage

IC = 100mAdc

2N5685

2N5686

V(BR)CEO

60

80

Vdc

Collector-Emitter Cutoff Current

VCE = 30Vdc

VCE = 40Vdc

2N5685

2N5686

ICEO

500

μAdc

Collector-Emitter Cutoff Current

VCE = 60Vdc, VBE = 1.5Vdc

VCE = 80Vdc, VBE = 1.5Vdc

2N5685

2N5686

ICEX

10

μAdc

Collector-Base Cutoff Current

VCE = 60Vdc

VCE = 80Vdc

2N5685

2N5686

ICBO

2.0

mAdc

Emitter-Base Cutoff Current

VEB = 5.0Vdc

IEBO

1.0

mAdc

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

2N5685

2N5686

Unit

Collector-Emitter Voltage

VCEO

60

80

Vdc

Collector-Base Voltage

VCBO

60

80

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Base Current

IB

15

Adc

Collector Current

IC

50

Adc

Total Power Dissipation

@ TC = +25°C

(1)

@ TC = +100°C

(1)

PT

300

171

300

171

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-55 to +200

°C

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

.0584

°C/W

TO-3 (TO-204AE)

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