CJD340 NPN

CJD350 PNP

SURFACE MOUNT

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD340, CJD350

types are Complementary Silicon Power Transistors

manufactured in a surface mount package designed for

high voltage general purpose applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

300

V

Collector-Emitter Voltage

VCEO

300

V

Emitter-Base Voltage

VEBO

3.0

V

Continuous Collector Current

IC

500

mA

Peak Collector Current

ICM

750

mA

Power Dissipation

PD

15

W

Power Dissipation (TA=25°C)

PD

1.56

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

8.33

°C/W

Thermal Resistance

ΘJA

80.1

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCE=300V

100

µA

IEBO

VEB=3.0V

100

µA

BVCEO

IC=1.0mA

300

V

hFE

VCE=10V, IC=50mA

30

240

DPAK TRANSISTOR CASE

R2 (4-January 2010)

www.centra lsemi.com