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2N3507 датащи(PDF) 2 Page - Microsemi Corporation

номер детали 2N3507
подробное описание детали  NPN MEDIUM POWER SILICON TRANSISTOR
PDF  2 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3507 датащи(HTML) 2 Page - Microsemi Corporation

  2N3507 Datasheet HTML 1Page - Microsemi Corporation 2N3507 Datasheet HTML 2Page - Microsemi Corporation  
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/349
T4-LDS-0016 Rev. 1 (072040)
Page 2 of 2
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 3.0Adc, VCE = 5Vdc
2N3506
2N3507
hFE
25
20
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 1.0Vdc
2N3506
2N3507
hFE
25
17
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 2Vdc
2N3506A
2N3507A
hFE
25
17
Collector-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc
VCE(sat)
0.5
Vdc
Collector-Emitter Saturation Voltage
IC = 1.5Adc, IB = 150mAdc
VCE(sat)
1.0
Vdc
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
VCE(sat)
1.5
Vdc
Base-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc
VBE(sat)
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 1.5Adc, IB = 150mAdc
VBE(sat)
0.8
1.3
Vdc
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
VBE(sat)
2.0
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 100mAdc, VCE = 5Vdc, f = 20MHz
|hfe|
3.0
15
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo
40
pF
Input Capacitance
VEB = 3.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cibo
300
pF
SWITCHING CHARACTERISTICS (4)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Delay Time
IC = 1.5Adc, IB1 = 150mAdc
td
15
ns
Rinse Time
IC = 1.5Adc, IB1 = 150mAdc
tr
30
ns
Storage Time
IC = 1.5Adc, IB1 = IB2 = 150mAdc
ts
55
ns
Fall Time
IC = 1.5Adc, IB1 = IB2 = 150mAdc
tf
35
ns
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
(4) Consult MIL-PRF-19500/349 For Additional Infornation.



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