CJD31C NPN

CJD32C PNP

SURFACE MOUNT

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD31C, CJD32C

types are Complementary Silicon Power Transistors

manufactured by the epitaxial base process, mounted

in a surface mount package designed for power

amplifier and high speed switching applications.

MARKING: FULL PART NUMBER

DPAK TRANSISTOR CASE

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

3.0

A

Peak Collector Current

ICM

5.0

A

Continuous Base Current

IB

1.0

A

Power Dissipation

PD

15

W

Power Dissipation (TA=25°C)

PD

1.56

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

8.33

°C/W

Thermal Resistance

ΘJA

80.1

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEO

VCE=60V

50

µA

ICES

VCE=100V

20

µA

IEBO

VEB=5.0V

1.0

mA

BVCEO

IC=30mA

100

V

VCE(SAT)

IC=3.0A, IB=375mA

1.2

V

VBE(ON)

VCE=4.0V, IC=3.0A

1.8

V

hFE

VCE=4.0V, IC=1.0A

25

hFE

VCE=4.0V, IC=3.0A

10

50

fT

VCE=10V, IC=500mA, f=1.0MHz

3.0

MHz

hfe

VCE=10V, IC=500mA, f=1.0kHz

20

R2 (4-January 2010)

www.centra lsemi.com