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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5692 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC5692 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC5692 2004-07-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEX 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V DC IC 2.5 Collector current Pulse ICP 4.0 A Base current IB 250 mA DC 625 Collector power dissipation t = 10 s PC (Note) 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.3 A 400 ⎯ 1000 DC current gain hFE (2) VCE = 2 V, IC = 1 A 200 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 0.14 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 1.10 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 13 ⎯ pF Rise time tr ⎯ 40 ⎯ Storage time tstg ⎯ 500 ⎯ Switching time Fall time tf See Figure 1. VCC ∼− 30 V, RL = 30 Ω IB1 = −IB2 = 33.3 mA ⎯ 120 ⎯ ns Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 0.01 g (typ.) |
Аналогичный номер детали - 2SC5692 |
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Аналогичное описание - 2SC5692 |
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