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2SC5465 датащи(PDF) 3 Page - Toshiba Semiconductor |
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2SC5465 датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SC5465 2005-02-01 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) hFE – IC Collector current IC (mA) VCE (sat) – IC Collector current IC (mA) VBE (sat) – IC Base-emitter voltage VBE (V) IC – VBE 800 0 0 Common emitter VCE = 5 V 0.2 0.4 0.6 0.8 1.0 1.2 200 400 600 Tc = 100°C 25 −55 Common emitter VCE = 5 V 1 1 30 100 300 10 30 100 300 1000 Tc = 100°C −55 25 3 10 3 Common emitter IC/IB = 5 0.01 1 0.3 1 3 3 10 30 100 300 Tc = 100°C −55 25 0.03 0.1 1000 Common emitter IC/IB = 5 0.05 3 1 3 10 10 30 100 300 1000 Tc = 100°C −55 25 0.3 1 0.1 Safe Operating Area Collector-emitter voltage VCE (V) Common emitter Tc = 25°C 0 0 1000 200 IB = 5 mA 400 600 800 2 4 6 8 10 100 120 80 60 40 30 20 10 100 3 0.001 10 1 0.3 0.1 30 300 1000 3000 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 µs* 100 µs* DC operation Tc = 25°C 100 ms* 10 ms* 0.03 0.01 0.003 |
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