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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5458 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC5458 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC5458 2005-02-01 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications • Excellent switching times: tr = 0.5 µs (max) tf = 0.3 µs (max) (IC = 0.4 A) • High collector breakdown voltage: VCEO = 400 V Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 0.8 Collector current Pulse ICP 1.5 A Base current IB 0.5 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC 10 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) |
Аналогичный номер детали - 2SC5458 |
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Аналогичное описание - 2SC5458 |
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