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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5359 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC5359 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SC5359 2004-07-07 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector power dissipation (Tc = 25°C) PC 180 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 230 V, IE = 0 ― ― 5.0 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 5.0 µA Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 230 ― ― V hFE (1) (Note) VCE = 5 V, IC = 1 A 55 ― 160 DC current gain hFE (2) VCE = 5 V, IC = 7 A 35 87 ― Collector-emitter saturation voltage VCE (sat) IC = 8 A, IB = 0.8 A ― 0.4 3.0 V Base-emitter voltage VBE VCE = 5 V, IC = 7 A ― 1.0 1.5 V Transition frequency fT VCE = 5 V, IC = 1 A ― 30 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 200 ― pF Note: hFE (1) classification R: 55 to 110, O: 80 to 160 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.75 g (typ.) |
Аналогичный номер детали - 2SC5359 |
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Аналогичное описание - 2SC5359 |
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