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2SC5175 датащи(PDF) 3 Page - Toshiba Semiconductor |
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2SC5175 датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SC5175 2004-07-26 3 Collector current IC (A) VBE (sat) – IC Collector-emitter voltage VCE (V) Safe Operating Area hEF – IC Collector current IC (A) Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) VCE (sat) – IC 0 0 4 8 2 4 6 8 IB = 10 mA 10 2 6 10 Common emitter Tc = 25°C 40 20 30 50 100 60 70 80 90 0 0 4 0.4 1.2 1.6 Common emitter VCE = 1 V 2 6 8 Tc = 100°C 25 −25 0.8 2.0 700 30 0.03 Common emitter VCE = 1 V 50 100 300 500 0.3 0.5 5 Tc = 100°C 25 −25 0.05 1 10 10 3 0.1 0.5 10 0.01 0.03 0.1 0.3 1 3 10 3 1 5 0.01 0.3 0.1 Common emitter IC/IB = 20 Tc = 100°C 25 −25 0.03 0.05 Common emitter IC/IB = 20 0.1 0.03 0.5 0.05 0.1 0.3 0.5 10 1 0.3 3 5 Tc = 100°C 25 −25 3 5 1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.3 3 5 100 0.03 0.1 0.05 1 5 10 IC max (continuous) IC max (pulsed)* 10 ms* 100 ms* DC operation Ta = 25°C VCEO max 1 10 0.3 0.5 1 ms* 50 30 0.5 0.1 3 |
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