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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5030 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC5030 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC5030 2004-07-26 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) • High collector power dissipation: PC = 1.3 W Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V VCES 40 Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 8 V DC IC 5 Collector current Pulse (Note) ICP 8 A Base current IB 0.5 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ― ― 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 20 ― ― V hFE (1) VCE = 2 V, IC = 0.5 A 800 ― 3200 DC current gain hFE (2) VCE = 2 V, IC = 4 A 250 ― ― Collector-emitter saturation voltage VCE (sat) IC = 4 A, IB = 40 mA ― ― 0.5 V Base-emitter voltage VBE VCE = 2 V, IC = 4 A ― ― 1.2 V Transition frequency fT VCE = 2 V, IC = 0.5 A ― 150 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 45 ― pF Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.) |
Аналогичный номер детали - 2SC5030 |
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Аналогичное описание - 2SC5030 |
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