FMMT593 datasheet(1/4 Pages) WEITRON

номер детали	FMMT593

подробное описание детали	General Purpose Transistor PNP Silicon

PDF	4 Pages

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производитель	WEITRON [Weitron Technology]

домашняя страница	http://www.weitron.com.tw

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General Purpose Transistor PNP Silicon

Maximum Ratings

Collector Current

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Breakdown Voltage

Symbol

IC

Value

-120

-100

-5.0

Unit

V

A

-1.0

Rating

Power Dissipation

TA=25°C

Junction Temperature Range

Storage Temperature Range

PD

TJ

TSTG

V(BR)CEO

V(BR)CBO

V(BR)EBO

250

+150

mW

°C

-5.0

-

-0.1

-

WEITRON

http://www.weitron.com.tw

1/4

06-May-10

FMMT593=593

VCB = -100V, IE = 0

VEB = -4V, IC = 0

IC = 0, IE = -100µA

Collent-Base Breakdown Voltage

IC = -100µA, IE = 0

Collent-Emitter Breakdown Voltage1

IC = -10mA, IB = 0

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

IEBO

-55 to +150

Characteristics

Min

Max

Typ

FMMT593

1

2

3

BASE

COLLECTOR

EMITTER

SOT-23

1

2

3

Lead(Pb)-Free

P b

Device Marking

Off Characteristics

Electrical Characteristics (TA=25ºC Unless Otherwise noted)

-0.1

-

-120

-100

V

µA

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