ZXTP25100CZ datasheet(5/8 Pages) DIODES

5 / 8 page

ZXTP25100CZ

Issue 1- December 2007

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-Base breakdown

voltage

BVCBO

-115

-180

IC = -100μA

Collector-Emitter

breakdown voltage

(base open)

BVCEO

-100

-140

IC = -10mA (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%.

Emitter-Base breakdown

voltage

BVEBO

-7

-8.4

IE= -100μA

Emitter-Collector

breakdown voltage

(reverse blocking)

BVECX

-7

-8.3

IE = -100μA, RBC < 1kΩ or -

0.25V > VBC > 0.25V

Emitter-Collector

breakdown voltage (base

open)

BVECO

-7

-8.8

IE = -100μA

Collector-Base cut-off

current

ICBO

<-1

-50

-0.5

μA

VCB =-115V

VCB =-115V, Tamb=100°C

Collector-Emitter cut-off

current

ICEX

-100

VCE = -90V, RBE < 1kΩ or -

0.25V < VBE < 1V

Emitter-Base cut-off

current

IEBO

<-1

-50

VEB = -5.6V

Collector-Emitter

saturation voltage

VCE(sat)

-140

-80

-180

-155

-210

-115

-315

-225

IC = -100mA, IB = -1 mA(*)

IC = -500mA, IB = -50mA(*)

IC = -500mA, IB = -20mA(*)

IC = -1A, IB = -100mA(*)

Base-Emitter saturation

voltage

VBE(sat)

-860

-950

IC = -1A, IB = -100mA(*)

Base-Eitter turn-on

voltage

VBE(on)

-800

-900

IC =-1A, VCE = -2V(*)

Static forward current

transfer ratio

hFE

200

180

110

350

320

190

500

IC = -10mA, VCE = -2V(*)

IC = -100mA, VCE = -2V(*)

IC = -500mA, VCE = -2V(*)

IC = -1A, VCE = -2V(*)

Transition frequency

180

MHz

IC = -20mA, VCE = -15V

f = 100MHz

Input capacitance

Cibo

153

VEB = -0.5V, f = 1MHz(*)

Output capacitance

Cobo

14.1

VCB = 10V, f = 1MHz(*)

Delay time

15.8

Vcc = -10V, Ic = -500mA

IB1 = -IB2 = -50mA

Rise time

Storage time

411

Fall time

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