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ZXTP19100CFF датащи(PDF) 2 Page - Diodes Incorporated

номер детали ZXTP19100CFF
подробное описание детали  100V, SOT23F, PNP medium power transistor
PDF  8 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP19100CFF датащи(HTML) 2 Page - Diodes Incorporated

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ZXTP19100CFF
Issue 1 - October 2007
2
www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs
(e) Junction to Case from Collector Tab.
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-110
V
Collector-emitter voltage (forward blocking)
VCEX
-110
V
Collector-emitter voltage
VCEO
-100
V
Emitter-collector voltage (reverse blocking)
VECO
-7
V
Emitter-base voltage
VEBO
-7
V
Continuous collector current(c)
IC
-2
A
Peak pulse current
ICM
-3
A
Base current
IB
-1
A
Power dissipation at TA =25°C(a)
Linear derating factor
PD
0.84
W
mW/
°C
Power dissipation at TA =25°C(b)
Linear derating factor
PD
1.34
W
mW/
°C
Power dissipation at TA =25°C(c)
Linear derating factor
PD
1.5
W
mW/
°C
Power dissipation at TA =25°C(d)
Linear derating factor
PD
2W
mW/
°C
Operating and storage temperature range
Tj, Tstg
-55 to 150
°C
Parameter
Symbol
Value
Unit
Junction to Ambient(a)
R JA
149.3
°C/W
Junction to Ambient(b)
R JA
93.4
°C/W
Junction to Ambient(c)
R JA
83.3
°C/W
Junction to Ambient(d)
R JA
60
°C/W
Junction to Case(e)
R JC
38
°C/W



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