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ZXTP19060CZ датащи(PDF) 5 Page - Diodes Incorporated

номер детали ZXTP19060CZ
подробное описание детали  60V PNP medium transistor in SOT89
PDF  8 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP19060CZ датащи(HTML) 5 Page - Diodes Incorporated

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ZXTP19060CZ
Issue 1- February 2008
5
www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BVCBO
-60
-110
V
IC = -100µA
Collector-Emitter
breakdown voltage
BVCEO
-60
-90
V
IC= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
Emitter-Collector
breakdown voltage
(reverse blocking)
BVECX
-7
-8.4
V
IE = -100µA, RBC < 1kΩ or
0.25V > VBC > -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking)
BVECO
-7
-8.8
V
IE = -100µA
Emitter-Base breakdown
voltage
BVEBO
-7
-8.4
V
IE = -100µA
Collector-Base cut-off
current
ICBO
<1
-50
-0.5
nA
µA
VCB = -60V
VCB = -60V, Tamb=100°C
Emitter cut-off current
IEBO
<1
-50
nA
VEB = -5.6V
Collector-Emitter
saturation voltage
VCE(sat)
-62
-150
-500
-105
-145
-240
-80
-205
-750
-165
-200
-410
mV
mV
mV
mV
mV
mV
IC = -1A, IB = -100mA(*)
IC = -1A, IB = -20mA(*)
IC = -2A, IB = -40mA(*)
IC = -2A, IB = -200mA(*)
IC = -3A, IB = -300mA(*)
IC = -4.5A, IB = -450mA(*)
Base-Emitter saturation
voltage
VBE(sat)
-965
-1050
mV
IC = -4.5A, IB = -450mA(*)
Base-Emitter turn-on
voltage
VBE(on)
-875
-1000
mV
IC = -4.5A, VCE = -2V(*)
Static forward current
transfer ratio
hFE
200
160
25
330
260
45
500
IC = -100mA, VCE = -2V(*)
IC = -1A, VCE = -2V(*)
IC = -4.5A, VCE = -2V(*)
Transition frequency
fT
180
MHz
IC = -50mA, VCE = -10V
f = 50MHz
Input capacitance
Cibo
280
400
pF
VEB = -0.5V, f = 1MHz(*)
Output capacitance
Cobo
29.5
40
pF
VCB = -10V, f = 1MHz(*)
Delay time
td
24.3
ns
IC = -500mA, VCC = -10V,
IB1 = -IB2 = -50mA
Rise time
tr
13.2
ns
Storage time
ts
456
ns
Fall time
tf
68.2
ns



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