ZXTP19060CFF datasheet(4/8 Pages) DIODES

4 / 8 page

ZXTP19060CFF

Issue 2 - October 2007

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown

voltage

BVCBO

-60

-110

IC = -100 A

Collector-emitter breakdown

voltage (base open)

BVCEO

-60

-90

IC = -10mA (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

Emitter-base breakdown

voltage

BVEBO

-7

-8.4

IE = -100 A

Emitter-collector breakdown

voltage (reverse blocking)

BVECX

-7

-8.4

IE = -100 A, RBC < 1k or

0.25V > VBC > -0.25V

Emitter-collector breakdown

voltage (base open)

BVECO

-7

-8.8

IE = -100 A,

Collector-base cut-off current

ICBO

<-1

-50

VCB = -60V

-0.5

AVCB = -60V, Tamb= 100°C

Emitter-base cut-off current

IEBO

<-1

-50

VEB = -5.6V

Collector-emitter saturation

voltage

VCE(sat)

-60

-75

IC = -1A, IB = -100mA(*)

-140

-200

IC = -1A, IB = -20mA(*)

-180

-270

IC = -4A, IB = -400mA(*)

Base-emitter saturation

voltage

VBE(sat)

-935

-1050

IC = -4A, IB = -400mA(*)

Base-emitter turn-on voltage

VBE(on)

-835

-950

IC = -4A, VCE = -2V(*)

Static forward current transfer

ratio

hFE

200

350

500

IC = -100mA, VCE = -2V(*)

160

280

IC = -1A, VCE = -2V(*)

IC = -4A, VCE = -2V(*)

Transition frequency

180

MHz

IC = -50mA, VCE = -10V

f = 50MHz

Output capacitance

Cobo

29.5

VCB = -10V, f = 1MHz(*)

Delay time

24.3

VCC = -10V.

IC = -500mA,

IB1 = -50mA, IB2= -50mA.

Rise time

13.2

Storage time

456

Fall time

68.2

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