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ZXTP5401GTA датащи(PDF) 4 Page - Diodes Incorporated

номер детали ZXTP5401GTA
подробное описание детали  150V, SOT223, PNP High voltage transistor
PDF  8 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP5401GTA датащи(HTML) 4 Page - Diodes Incorporated

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ZXTP5401G
Issue 1 - August 2007
4
www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown
voltage
BVCBO
-160
-270
V
IC = -100 A,
Collector-emitter breakdown
voltage (base open)
BVCEO
-150
-240
V
IC = -1mA *
Emitter-base breakdown
voltage
BVEBO
-5
-8.1
V
IE = -10 A
Collector cut-off current
ICBO
<-1
-50
nA
VCB = -120V
-50
AVCB = -120V, Tamb= 100°C
Collector-emitter saturation
voltage
VCE(sat)
-50
-200
mV
IC = -10mA, IB = -1mA *
-70
-500
mV
IC = -50mA, IB = -5mA *
Base-emitter saturation
voltage
VBE(sat)
-700
-1000
mV
IC = -10mA, IB = -1mA *
-750
-1000
mV
IC = -50mA, IB = -5mA *
Static forward current transfer
ratio
hFE
50
135
IC = -1mA, VCE = -5V *
60
135
240
IC = -10mA, VCE = -5V *
50
130
IC = -50mA, VCE = -5V *
Transition frequency
fT
100
MHz IC = -10mA, VCE = -10V
f = 100MHz
Output capacitance
COBO
6pF
VCB = -10V, f = 1MHz *
Delay time
t(d)
386
ns
VCC = -50V. IC = -100mA,
IB1 = IB2= -10mA.
Rise time
t(r)
202
ns
Storage time
t(s)
1720
ns
Fall time
t(f)
275
ns



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