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ZXTP2041F датащи(PDF) 3 Page - Diodes Incorporated

номер детали ZXTP2041F
подробное описание детали  40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
PDF  6 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP2041F датащи(HTML) 3 Page - Diodes Incorporated

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ZXTP2041F
Datasheet Number: DS33721 Rev. 6 - 2
3 of 6
www.diodes.com
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP2041F
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ.
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-40
-
-
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 4)
V(BR)CEO
-40
-
-
V
IC = -10mA
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
-
-
V
IE = -100µA
Collector Cutoff Current
ICBO
-
-
-100
nA
VCB = -30V
Emitter Cutoff Current
IEBO
-
-
-100
nA
VEB = -4V
Emitter Cutoff Current
ICES
-
-
-100
nA
VCE = -30V
DC current transfer Static ratio (Note 4)
hFE
300
-
-
-
IC = -1mA, VCE = -5V
300
-
800
IC = -100mA, VCE = -5V
250
-
-
IC = -500mA, VCE = -5V
160
-
-
IC = -1A, VCE = -5V
30
-
-
IC = -2A, VCE = -5V
Collector-Emitter Saturation Voltage (Note 4)
VCE(sat)
-
-
-0.20
V
IC = -100mA, IB = -1mA
-
-
-0.35
IC = -500mA, IB = -20mA
-
-
-0.50
IC = -1A, IB = -100mA
Base-Emitter Saturation Voltage (Note 4)
VBE(sat)
-
-
-1.1
V
IC = -1A, IB = -100mA
Base-Emitter Turn-on Voltage (Note 4)
VBE(on)
-
-
-1.0
V
IC = -1A, VCE = -5V
Transitional Frequency
fT
150
300
-
MHz
IC = -50mA, VCE = -10V,
f = 100MHz
Output capacitance
Cobo
-
-
10
pF
VCB = -10V, f = 1MHz,
Switching Time
Delay Time
t(d)
-
34.9
-
ns
VCC = -10V, IC = -500mA,
IB1 = -IB2 =-25mA
Rise Time
t(r)
-
19.2
-
Storage Time
t(s)
-
249
-
Fall Time
t(f)
-
62
-
Notes:
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.



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