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ZXTP2039FTC датащи(PDF) 3 Page - Diodes Incorporated

номер детали ZXTP2039FTC
подробное описание детали  SOT23 80 volt PNP silicon planar medium power
PDF  5 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP2039FTC датащи(HTML) 3 Page - Diodes Incorporated

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ZXTP2039F
Issue 3 - August 2005
3
www.zetex.com
© Zetex Semiconductors plc 2005
Electrical characteristics (@TAMB = 25°C)
Parameter
Symbol
Min.
Max.
Unit
Conditions
Collector-base breakdown
voltage
V(BR)CBO
-80
V
IC=-100 A
Collector-emitter breakdown
voltage
V(BR)CEV
-80
V
IC=-1 A
-0.3V < VBE < 1V
Collector-emitter breakdown
voltage
V(BR)CEO
-60
V
IC=-10mA
*
NOTES:
* Measured under pulsed conditions. Pulse width=300 S. Duty cycle
2%
Spice parameter data is available upon request for this device
Emitter-base breakdown
voltage
V(BR)EBO
-5
V
IE=-100µA
Collector-emitter cut-off current
ICES
-100
nA
VCE=-60V
Collector-base cut-off current
ICBO
-100
nA
VCB=-60V
Emitter-base cut-off current
IEBO
-100
nA
VEB=-4V
Static forward current transfer
ratio
hFE
100
100
80
15
300
IC=-1mA, VCE=-5V
IC=-500mA, VCE=-5V
*
IC=-1A, VCE=-5V
*
IC=-2A, VCE=-5V
*
Collector-emitter saturation
voltage
VCE(sat)
-0.2
-0.3
-0.6
V
V
V
IC=-100mA, IB=-2mA
*
IC=-500mA, IB=-50mA
*
IC=-1A, IB=-100mA
*
Base-emitter saturation voltage
VBE(sat)
-1.2
V
IC=-1A, IB=-100mA
*
Base-emitter turn-on voltage
VBE(on)
-1.0
V
IC=-1A, VCE=-5V
*
Transition frequency
fT
150
IC=-50mA, VCE=-10V
f=100MHz
Output capacitance
Cobo
10
pF
VCB=-10V, f=1MHz



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