ZXTP2029F datasheet(4/8 Pages) DIODES

4 / 8 page

ZXTP2029F

Issue 3 - May 2007

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown

voltage

V(BR)CBO

-130

-160

IC=-100μA

Collector-emitter breakdown

voltage

V(BR)CEV

-130

-160

IC =−1μA, 1V> VBE>-0.3V

Collector-emitter breakdown

voltage

V(BR)CEO

-100

-120

IC=-10mA

(a)

NOTES:

(a) Measured under pulsed conditions. Pulse width=300 S. Duty cycle

2%.

Emitter-base breakdown

voltage

V(BR)EBO

-7.0

-8.3

IE=-100μA

Collector-emitter cut-off

current

ICEV

-20

VCE=-100V,

VBE = 1V

Collector-base cut-off current ICBO

-20

VCB=-100V

Emitter-base cut-off current

IEBO

-10

VEB=-6V

Static forward current

transfer ratio

HFE

100

220

200

300

IC=-10mA, VCE=-2V

(a)

IC=-1A, VCE=-2V

(a)

Ic=-3A, VCE=-2V

Collector-emitter saturation

voltage

VCE(sat)

-20

-60

-135

-180

-30

-80

-180

-250

IC=-100mA, IB=-10mA

(a)

IC=-1A, IB=-100mA

(a)

IC=-3A, IB=-300mA

(a)

IC=-4A, IB=-400mA

(a)

Base-emitter saturation

voltage

VBE(sat)

-0.90

-1.00

IC=-3A, IB=-300mA

(a)

Base-emitter turn-on voltage

VBE(on)

-0.81

-0.90

IC=-3A, VCE=-2V

(a)

Transition frequency

150

MHz

Ic=-100mA, VCE=-10V,

f=50MHz

Output capacitance

Cobo

VCB=-10V, f=1MHz

Delay timetime

t(d)

VCC=-10V, IC=-1A,

IB1=IB2=-100mA

Rise time

t(r)

Storage time

t(stg)

410

Fall time

t(f)

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