ZXTP2027F datasheet(4/8 Pages) DIODES

4 / 8 page

ZXTP2027F

Issue 3 - May 2007

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown

voltage

V(BR)CBO

-100

-120

IC=-100μA

Collector-emitter breakdown

voltage

V(BR)CEV

-100

-120

IC =−1μA, 1V> VBE>-0.3V

Collector-emitter breakdown

voltage

V(BR)CEO

-60

-75

IC=-10mA

(a)

NOTES:

(a) Measured under pulsed conditions. Pulse width=300 S. Duty cycle

2%.

Emitter-base breakdown

voltage

V(BR)EBO

-7.0

-8.2

IE=-100μA

Collector-emitter cut-off

current

ICEV

-20

VCE=-80V,

VBE = 1V

Collector-base cut-off current

ICBO

-20

VCB=-80V

Emitter-base cut-off current

IEBO

-10

VEB=-6V

Static forward current transfer

ratio

HFE

100

250

200

145

300

IC=-10mA, VCE=-2V

(a)

IC=-2A, VCE=-2V

(a)

Ic=-4A, VCE=-2V

(a)

Ic=-10A, VCE=-2V

(a)

Collector-emitter saturation

voltage

VCE(SAT)

-15

-45

-70

-155

-25

-60

-95

-240

IC=-100mA, IB=-10mA

(a)

IC=-1A, IB=-100mA

(a)

IC=-2A, IB=-200mA

(a)

IC=-4A, IB=-200mA

(a)

Base-Emitter saturation

voltage

VBE(SAT)

-0.89

-1.0

IC=-4A, IB=-200mA

(a)

Base-Emitter turn-on voltage

VBE(on)

-0.81

-0.95

IC=-4A, VCE=-2V

(a)

Transition frequency

165

MHz

Ic=-100mA, VCE=-10V,

f=50MHz

Output capacitance

Cobo

VCB=-10V, f=1MHz

Delay timetime

t(d)

12.6

VCC=-10V, IC=-2A,

IB1=IB2=-200mA

Rise time

t(r)

10.2

Storage time

t(stg)

220

Fall time

t(f)

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