ZXTP2014G datasheet(4/6 Pages) DIODES

номер детали	ZXTP2014G

подробное описание детали	140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR

PDF	6 Pages

Scroll/Zoom	100%

производитель	DIODES [Diodes Incorporated]

домашняя страница	http://www.diodes.com

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4 / 6 page

ZXTP2014G

ISSUE 1 - JUNE 2005

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

Collector-base breakdown voltage

BVCBO

-180

-200

IC=-100 A

Collector-emitter breakdown voltage

BVCER

-180

-200

IC=-1 A, RB 1k

Collector-emitter breakdown voltage

BVCEO

-140

-160

IC=-10mA*

Emitter-base breakdown voltage

BVEBO

-7.0

-8.0

IE=-100 A

Collector cut-off current

ICBO

-20

-0.5

VCB=-150V

CB=-150V, Tamb=100 C

Collector cut-off current

ICER

-20

-0.5

VCB=-150V

CB=-150V, Tamb=100 C

Emitter cut-off current

IEBO

-10

VEB=-6V

Collector-emitter saturation voltage

VCE(SAT)

-40

-55

-85

-275

-60

-80

-120

-360

IC=-0.1A, IB=-5mA*

C=-0.5A, IB=-50mA*

C=-1A, IB=-100mA*

C=-3A, IB=-300mA*

Base-emitter saturation voltage

VBE(SAT)

-940

-1040

IC=-3A, IB=-300mA*

Base-emitter turn-on voltage

VBE(ON)

-830

-930

IC=-3A, VCE=-5V*

Static forward current transfer ratio

HFE

100

225

200

100

300

IC=-10mA, VCE=-5V*

C=-1A, VCE=-5V*

C=-3A, VCE=-5V*

C=-10A, VCE=-5V*

Transition frequency

120

MHz IC=-100mA, VCE=-10V

f=50MHz

Output capacitance

COBO

VCB=-10V, f=1MHz*

Switching times

tON

tOFF

636

IC=-1A, VCC=-50V,

IB1=-IB2=-100mA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

* Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

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